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Photodiodes and photodiode detectors

Photodiodes are semiconductor detectors in which the irradiation of the PN (or PIN) transition area results in a linear increase in the generated current with a steady increase in the intensity of the incident radiation. Hamamatsu offers a range of silicon photodiode detectors that are advantageous for a large number of scientific and industrial applications.

This group includes not only conventional silicon photodiodes, PIN photodiodes and avalanche photodiodes, but also photodiode arrays, dual-color detectors, silicon avalanche photodiode arrays (MPPC detectors) and position sensitive detectors (PSDs).

There are two main subsets of silicon photodiode detectors:

  • Stand-alone detectors (OEM elements)
  • Detection modules that integrate the detector together with other elements into a single housing

Key features

  • Excellent linear dependence of the measured signal on the value of the incident photon flux
  • Low internal noise
  • Wide spectral response
  • long lifetime
  • mechanical robustness
  • compactness
Miroslav Kořínek
Expert advisor

RNDr. Miroslav Kořínek Ph.D.

+420 720 994 252

korinek@optixs.cz

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Parameters

Types of silicon photodiode detectors

Silicon photodiode detectors include:

PN junction silicon photodiodes are characterized by high sensitivity and low noise. And are therefore ideal detectors for medical and analytical instruments, industrial measurement systems and other applications.

Silicon PIN junction photodiodes provide a very fast time response when a shutter voltage is applied. They are therefore suitable for use in optical communications, fast sensors, etc.

Avalanche PIN photodiodes exhibit an intrinsic gain, which distinguishes them from conventional silicon photodiodes. In these components, there is a region of high electric field that accelerates the generated charge carriers so much that secondary charge carriers are formed by impact ionisation.

A photodiode array consists of several silicon photodiodes arranged either in a row sensor or in a two-dimensional array. Photodiode arrays find applications in many fields (laser beam positioning, colour measurement, spectrometry, etc.).

Dual-color detectors contain two different photosensors, with one sensor mounted over the other along the same optical axis. Each is sensitive to a different spectral region and the whole component can thus detect a wide range of radiation.

An array of silicon avalanche photodiodes that operate in the so-called Geiger mode is referred to as an MPPC detector. Its properties make it advantageous for detecting extremely weak signals (single photon counting level).

A PSD is a photodiode with a photosensitive resistive layer in the shape of a strip (1D detector) or a plate (2D detector). Unlike a CCD sensor with discrete elements, it provides continuous position data. PSDs have high spatial resolution and fast response.

Si photodiode modules

Photodiode modules are high-precision photodetectors that integrate a Si photodiode and an I/U amplifier into a single housing. The output of these modules is an analog voltage that can be easily controlled, e.g. with a voltmeter.

Model

Photosensitive area

Spectral response

Maximum sensitivity

C10439-01

2.4 × 2.4 mm2

190 to 1100 nm

960 nm

C10439-02

5.8 × 5.8 mm2

190 to 1100 nm

960 nm

C10439-03

10 × 10 mm2

190 to 1100 nm

960 nm

C10439-07

2.4 × 2.4 mm2

190 to 1100 nm

960 nm

C10439-08

5.8 × 5.8 mm2

190 to 1100 nm

960 nm

C10439-09

10 × 10 mm2

190 to 1100 nm

960 nm

C10439-10

Φ1 mm

500 to 1700 nm

1550 nm

C10439-11

Φ3 mm

500 to 1700 nm

1550 nm

Compatible signal processing unit: C10475

MPPC modules

These modules contain the MPPC photon detector together with other components required for its operation (amplifier, compensation circuit, high voltage power supply circuit).

Model

Number of channels

Effective photosensitive area/channel

Pixel pitch

Cooling

Output

C13365-1350SA

1

1.3 x 1.3 mm2

50 μm

No

Analog

C13365-3050SA

1

3 x 3 mm2

50 μm

No

Analog

C13366-1350GA

1

1.3 x 1.3 mm2

50 μm

TE

Analog

C13366-3050GA

1

3 x 3 mm2

50 μm

TE

Analog

C13366-1350GD

1

1.3 x 1.3 mm2

50 μm

TE

Digital

C13366-3050GD

1

3 x 3 mm2

50 μm

TE

Digital

C11209-110

1

1 x 1 mm2

10 μm

No

Analog

C13368-3050EA-16

16 (1 x 16)

3 x 3 mm2

50 μm

No

Analog

C13369-1025GA-04

16 (4 x 4)

1 x 1 mm2

25 μm

No

Analog

C13369-3050EA-04

16 (4 x 4)

3 x 3 mm2

50 μm

No

Analog

C13368-3050ED-16

16 (1 x 16)

3 x 3 mm2

50 μm

No

Digital

C13369-1025GD-04

16 (4 x 4)

1 x 1 mm2

25 μm

No

Digital

C13369-3050ED-04

16 (4 x 4)

3 x 3 mm2

50 μm

No

Digital

C13368-3050EM-16

16 (1 x 16)

3 x 3 mm2

50 μm

No

MCA

C13369-1025GM-04

16 (4 x 4)

1 x 1 mm2

25 μm

No

MCA

C13369-3050EM-04

16 (4 x 4)

3 x 3 mm2

50 μm

No

MCA

PSD modules

PSD modules integrate a high precision position sensitive detector and a low noise amplifier into one housing.

Model

Photosensitive area

Spectral response

Maximum sensitivity

C10443-01

4 × 4 mm2

320 to 1100 nm

960 nm

C10443-02

9 × 9 mm2

320 to 1100 nm

960 nm

C10443-03

12 × 12 mm2

320 to 1060 nm

920 nm

C10443-04

12 × 12 mm2

320 to 1060 nm

920 nm

C10443-06

10 × 10 mm2

320 to 1100 nm

960 nm

Compatible signal processing unit: C10460

Dokumenty

Si fotodiody - Katalog

MPPC - Katalog

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Expert advisor

Miroslav Kořínek

RNDr. Miroslav Kořínek Ph.D.