We distribute this product only in the Czech Republic and Slovakia.

MeasureReady FastHall Station

A complete Hall effect measurement system based on the M91 MeasureReady FastHall controller. The system includes a PC with software, a permanent 1T magnet and a sample holder. The system is suitable for samples with resistances up to 1 GΩ, which corresponds to a charge carrier mobility of 0.01 cm2/V.

  • Compact solution for Hall effect measurements
  • Measurement of samples with low charge mobility (up to 0.01 cm2/V)
  • Resistance range up to 10 mΩ - 1 GΩ
  • High measurement speed
  • Possible extension: liquid nitrogen cooled sample chamber
MeasureReady FastHall Station
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Lake Shore

OptiXs care

  • We will expertly consult your planned application
  • Our team is able to integrate the product into a larger system
  • We ensure fast delivery of spare parts and local service
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Parameters

Measurement options FastHall*, van der Pauw, Hall bar method
Derived quantities Hall coefficient, Hall mobility, resistivity, charge carrier concentration
Sample holder Solder plate (10 mm x 10 mm x 3 mm) or pin plate (10 mm x 10 mm x 2 mm)
Magnetic field DC, 1 T (RT), 0.8 T (with cryo chamber)
Resistance range 10 mΩ to 1 GΩ
Hall mobility range 0.01 to 106 cm2/V s
Measurement speed < 10 s (typical)
Interface USB, Ethernet

* Lake Shore Cryotronics' patented method without the need to change magnetic field polarity during measurement

Application

  • Solar cells - OPV, a:Si, µc-Si, CdTe, CuInGaSe (CIGS)
  • Organic Electronics - OTFT, Pentacene, Chalcogenides, OLED
  • Transparent conductive oxides- InSnO (ITO), ZnO, GaZnO, InGaZnO (IGZO)
  • III-V semiconductors - InP, InSb, InAs, GaN, GaP, GaSb, AIN based devices, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors
  • II-VI semiconductors - CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
  • Basic semiconductors - Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe based devices: HBTs and FETs
  • DMS (Dilute magnetic semiconductor) - GaMnAs, MnZnO
  • Half-Heusler compounds - TiNiSn, ZrNiSn, GdPtBi
  • Topological semimetals - TaAs, WTe2, MoTe2
  • Topological insulators - Bi2Te3, Bi2Se3, Sb2Te3
  • TMDC (Transition-metal Di-chalcogenides) - WS2, WSe2, MoS2, HfS2
  • Other 2D materials - BN, graphene structures
  • High temperature superconductors

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Direct contact

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