We distribute this product only in the Czech Republic and Slovakia.

MeasureReady M91

Hall effect controller based on Lake Shore's patented FastHall technology. The FastHall technology eliminates the need for a reverse magnetic field, greatly increasing the speed of measurement. It is an economical option for building your own setup or upgrading an existing setup to measure the Hall effect and related quantities.

  • Complete Hall effect analysis for van der Pauw and Hall bar samples
  • Patented FastHall measurement method without the need for a reverse magnetic field
  • Measurement of samples with low charge carrier mobility (down to 0.01 cm2/V)
  • Resistance range 10 mΩ to 10 MΩ, expandable to 200 GΩ
  • High measurement speed and accuracy
  • Automatic optimization of excitation values and measurement ranges

OptiXs care

  • We will expertly consult your planned application
  • Our team is able to integrate the product into a larger system
  • We ensure fast delivery of spare parts and local service
What else we can help with

Parameters

Measurement options FastHall* method - van der Pauw samples
Traditional method - van der Pauw and Hall bar samples
Derived quantities Hall coefficient, Hall mobility, resistivity, charge carrier concentration
Resistivity range 10 mΩ to 10 MΩ (200 GΩ)
Hall mobility range 0.01 to106 cm2/V s
Interface USB 3.0, USB 2.0 (RS 232 emulation), Ethernet, WiFi, WPAN

* Lake Shore Cryotronics' patented method without the need to change magnetic field polarity during measurement

Application

  • Solar cells - OPV, a:Si, µc-Si, CdTe, CuInGaSe (CIGS)
  • Organic Electronics - OTFT, Pentacene, Chalcogenides, OLED
  • Transparent conductive oxides- InSnO (ITO), ZnO, GaZnO, InGaZnO (IGZO)
  • III-V semiconductors - InP, InSb, InAs, GaN, GaP, GaSb, AIN based devices, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors
  • II-VI semiconductors - CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
  • Basic semiconductors - Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe based devices: HBTs and FETs
  • DMS (Dilute magnetic semiconductor) - GaMnAs, MnZnO
  • Half-Heusler compounds - TiNiSn, ZrNiSn, GdPtBi
  • Topological semimetals - TaAs, WTe2, MoTe2
  • Topological insulators - Bi2Te3, Bi2Se3, Sb2Te3
  • TMDC (Transition-metal Di-chalcogenides) - WS2, WSe2, MoS2, HfS2
  • Other 2D materials - BN, graphene structures
  • High temperature superconductors

Dokumenty

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