We distribute this product only in the Czech Republic and Slovakia.

HMS Hall Effect Measurement

The complete Hall effect measurement system of the 8400 series covers the widest possible range of applications, as it allows measurements with both DC and optionally AC magnetic fields. The system is available in a 4 inch magnet version (8404) and a 6 inch magnet version (8407).

  • Complete system for Hall effect measurements
  • For measuring charge carrier mobility from 1 to 106 cm2/V
  • Optional: Mobility measurements from 10-3 cm2/V (AC magnetic field)
  • Temperature module with temperature control from 15 K to 1273 K
  • DC magnetic field up to 2.25 T (model 8404) or up to 1.67 (model 8407)
  • Resistance range from 0.5 mΩ - 10 MΩ (optional up to 200 GΩ)
HMS Hall Effect Measurement
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  • Our team is able to integrate the product into a larger system
  • We ensure fast delivery of spare parts and local service
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Parameters

Application

  • Solar cells - OPV, a:Si, µc-Si, CdTe, CuInGaSe (CIGS)
  • Organic Electronics - OTFT, Pentacene, Chalcogenides, OLED
  • Transparent conductive oxides- InSnO (ITO), ZnO, GaZnO, InGaZnO (IGZO)
  • III-V semiconductors - InP, InSb, InAs, GaN, GaP, GaSb, AIN based devices, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors
  • II-VI semiconductors - CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
  • Basic semiconductors - Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe based devices: HBTs and FETs
  • DMS (Dilute magnetic semiconductor) - GaMnAs, MnZnO
  • Half-Heusler compounds - TiNiSn, ZrNiSn, GdPtBi
  • Topological semimetals - TaAs, WTe2, MoTe2
  • Topological insulators - Bi2Te3, Bi2Se3, Sb2Te3
  • TMDC (Transition-metal Di-chalcogenides) - WS2, WSe2, MoS2, HfS2
  • Other 2D materials - BN, graphene structures
  • High temperature superconductors

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